Specification Type Designator: BD139 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 12 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 50 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Package: TO126