Specification Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Transistor Polarity: PNP Technology: Si Series: BD136 Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 500 mV Maximum DC Collector Current: 1.5 A Pd - Power Dissipation: 1.25 W Continuous Collector Current: - 1.5 A DC Collector/Base Gain hfe Min: 25 DC Current Gain hFE Max: 250